Aluminum Nitride Ceramic Material
Aluminium Nitride is frequently selected for its thermal conductivity and its resistance to attack by fluorine plasmas.
Applications
- Chamber parts for semiconductor process equipment
- Heat radiation substrate
Properties
| ALN99 | ALN94 | |||
|---|---|---|---|---|
| General properties | Characteristics | High purity | High thermal conductivity | |
| Main component purity (wt%) | 99 | 94 | ||
| Color | Light gray | Light gray | ||
| Density (g/cm3) | 3.24 | 3.31 | ||
| Water absorption (%) | 0 | 0 | ||
| Mechanical properties | Bending strength (MPa) | 295 | 345 | |
| Young’s modulus (GPa) | 320 | 320 | ||
| Vickers hardness (GPa) | 11 | 11 | ||
| Thermal properties | Max. operating temperature (°C) | 1000 | 1000 | |
| Coefficient of thermal expansion (1/°C×10-6) | RT~500°C | 4.4 | 4.4 | |
| RT~800°C | 5.1 | 5.1 | ||
| Coefficient of thermal conductivity (W/m×K) | 80 | 150 | ||
| Thermal shock resistance ΔT (°C) | 300 | 400 | ||
| Electrical properties | Volume resistivity | 25°C | 1014 | 1014 |
| 300°C | 108 | 1010 | ||
| 500°C | 107 | 107 | ||
| 800°C | 105 | 105 | ||
| Dielectric constant | 10GHz | 8.5 | 8.5 | |
| Dielectric loss (×10-4) | 30 | 30 | ||
| Q factor (×104) | 0.03 | 0.03 | ||
| Dielectric breakdown voltage (KV/mm) | – | – | ||
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